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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4420 TC4429 TC4429
6A HIGH-SPEED MOSFET DRIVERS
FEATURES
s s s s s s s s s s s s Latch-Up Protected: Will Withstand > 1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected .................................................... 4 kV Matched Rise and Fall Times ...................... 25nsec High Peak Output Current ......................... 6A Peak Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive ..................... 10,000 pF Short Delay Time .................................. 55nsec Typ Logic High Input, Any Voltage ............. 2.4V to VDD Low Supply Current With Logic "1" Input .. 450 A Low Output Impedance .................................... 2.5 Output Voltage Swing to Within 25 mV of Ground or VDD
GENERAL DESCRIPTION
The TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3V or as low as - 5V without upset or damage to the device. This eliminates the need for external level shifting cicuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.) and the output rise and fall times are only 25nsec (typ.) into 2500pF across the useable power supply range. Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system reliability.
APPLICATIONS
s s s s Switch-Mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers
ORDERING INFORMATION
Part No. Logic
Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Inverting Inverting Inverting Inverting Inverting Inverting Inverting
Package
Temperature Range
FUNCTIONAL BLOCK DIAGRAM
VDD 500 A TC4429
300 mV OUTPUT
TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA TC4420IJA TC4420MJA TC4429CAT TC4429COA TC4429CPA TC4429EOA TC4429EPA TC4429IJA TC4429MJA
5-Pin TO-220 0C to +70C 8-Pin SOIC 0C to +70C 8-Pin PDIP 0C to +70C 8-Pin SOIC - 40C to +85C 8-Pin PDIP - 40C to +85C 8-Pin CerDIP -25C to +85C 8-Pin CerDIP - 55C to +125C 5-Pin TO-220 0C to +70C 8-Pin SOIC 0C to +70C 8-Pin PDIP 0C to +70C 8-Pin SOIC - 40C to +85C 8-Pin PDIP - 40C to +85C 8-Pin CerDIP - 25C to +85C 8-Pin CerDIP - 55C to +125C
INPUT 4.7V GND EFFECTIVE INPUT C = 38 pF TC4420
PIN CONFIGURATIONS
TO-220-5
VDD INPUT 1 2 3 4
8-Pin DIP
8 7 VDD OUTPUT OUTPUT GND VDD INPUT NC GND 1 2 3 4
8-Pin SOIC
8 7 VDD OUTPUT OUTPUT GND
TC4420 TC4429 Tab is Connected to VDD
INPUT GND VDD GND OUTPUT
NC GND
TC4420 TC4429
6 5
TC4420 TC4429
6 5
NOTE: Duplicate pins must both be connected for proper operation.
TC4420/9-6 10/18/96
TelCom Semiconductor reserves the right to make changes in the circuitry and specifications of its devices.
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V Input Voltage ............................................... - 5V to > VDD Input Current (VIN > VDD) ......................................... 50mA Power Dissipation, TA 70C PDIP ...............................................................730mW SOIC ...............................................................470mW CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Package Power Dissipation, TC 25C 5-Pin TO-220 (With Heat Sink) .........................12.5W Derating Factors (To Ambient) PDIP ............................................................. 8mW/C SOIC ............................................................. 4mW/C CerDIP ....................................................... 6.4mW/C 5-Pin TO-220 .............................................. 12mW/C Thermal Impedances (To Case) 5-Pin TO-220 RJ-C ...................................................... 10C/W Storage Temperature Range ................ - 65C to +150C Operating Temperature (Chip) .............................. +150C Operating Temperature Range (Ambient) C Version ............................................... 0C to +70C I Version ........................................... - 25C to +85C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Lead Temperature (Soldering, 10 sec) ................. +300C
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
Symbol
Input VIH VIL VIN (Max) IIN Output VOH VOL RO RO IPK IREV
Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current
Test Conditions
Min
2.4 -- -5 - 10 VDD - 0.025 -- -- -- -- 1.5
Typ
1.8 1.3 -- -- -- -- 2.1 1.5 6 --
Max
-- 0.8 VDD+0.3 10 -- 0.025 2.8 2.5 -- --
Unit
V V V A V V A A
0V VIN VDD See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V (See Figure 5) Duty Cycle 2% t 300 s Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 VIN = 3V VIN = 0V
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS VDD Power Supply Current Operating Input Voltage
-- -- -- -- -- -- 4.5
25 25 55 55 0.45 55 --
35 35 75 75 1.5 150 18
nsec nsec nsec nsec mA A V
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
ELECTRICAL CHARACTERISTICS:
Symbol
Input VIH VIL VIN (Max) IIN Output VOH VOL RO RO
Measured over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low
Test Conditions
Min
2.4 -- -5 - 10 VDD - 0.025 -- -- -- -- -- -- -- -- -- 4.5
Typ
-- -- -- -- -- -- 3 2.3 32 34 50 65 0.45 60 --
Max
-- 0.8 VDD + 0.3 10 -- 0.025 5 5 60 60 100 100 3 400 18
Unit
V V V A V V nsec nsec nsec nsec mA A V
0V VIN VDD See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 VIN = 3V VIN = 0V
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS VDD Power Supply Current Operating Input Voltage
NOTE: 1. Switching times guaranteed by design.
VDD = 18V
1 F 1 0.1 F 2 6 7 TC4429 4 5 CL = 2500 pF 8 0.1 F 0V INPUT OUTPUT +18V OUTPUT 0V 10% 10% +5V INPUT 10% tD1 90% tF tD2 90%
tR 90%
INPUT: 100 kHz, square wave, tRISE = t FALL 10 nS
Figure 1. Switching Time Test Circuit
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
TYPICAL CHARACTERISTICS
Rise Time vs Supply Voltage
120 100 80
TIME (ns)
Fall Time vs Supply Voltage
100
Rise and Fall Times vs Temperature
50 C L = 2200 pF VDD = 18V
80
40
C L = 10,000 pF
TIME (ns) TIME (ns)
60
C L = 10,000 pF
30
60
tFALL tRISE
C L = 4700 pF
40
40
C L = 4700 pF C L = 2200 pF
20
C L = 2200 pF
20 0
20
10
5
7
9
11
13
15
0
5
7
VDD (V)
9 11 VDD (V)
13
15
0 -60
-20
20 60 TA (C)
100
140
Rise Time vs Capacitive Load
100 80 60
TIME (ns)
Fall Time vs Capacitive Load
100 80
Propagation Delay Time vs Supply Voltage
65 60
60
DELAY TIME (ns)
TIME (ns) VDD = 5V
55 50 45 40 tD2
40
40
VDD = 5V VDD = 12V VDD = 18V
VDD = 12V VDD = 18V 20
20
tD1
10 1000
CAPACITIVE LOAD (pF)
10,000
10 1000
CAPACITIVE LOAD (pF)
10,000
35
4
6
8 10 12 14 16 SUPPLY VOLTAGE (V)
18
Propagation Delay Time vs Temperature
50 C L = 2200 pF VDD = 18V DELAY TIME (ns)
Supply Current vs Capacitive Load
84 VDD = 15V
SUPPLY CURRENT (mA) SUPPLY CURRENT (mA)
Supply Current vs Frequency
1000
CL= 2200 pF
40
70 56 42
18V
100
tD2
30
10V 5V
tD1
20
500 kHz
28
10
10
200 kHz
14
20 kHz
0 -60 0
0
0 100 1000 CAPACITIVE LOAD (pF)
10,000
-20
20 60 TA (C)
100
140
0
100 1000 FREQUENCY (kHz)
10,000
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
TYPICAL CHARACTERISTICS (Cont.)
High-State Output Resistance
5
2.5
Low-State Output Resistance
100 mA 4
ROUT ( ) ROUT ( )
2
10 mA
50 mA
100 mA 50 mA
1.5
3
10 mA
2
5
7
9
11 VDD (V)
13
15
1
5
7
9
11 VDD (V)
13
15
Effect of Input Amplitude on Propagation Delay
200
LOAD = 2200 pF
-9
Total nA*S Crossover*
4
160
DELAY TIME (ns)
Crossover Area (A*S) x 10
3
120
INPUT 2.4V INPUT 3V
2
80 INPUT 5V 40 INPUT 8V AND 10V
1
0
5 6 7 8 9 10 11 12 13 14 15 VDD (V)
0
5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V)
The values on this graph represent * the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2.
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
PACKAGE DIMENSIONS
PIN 1
8-Pin Plastic DIP
.260 (6.60) .240 (6.10)
.045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92)
.070 (1.78) .045 (1.14)
.310 (7.87) .290 (7.37)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87)
3MIN.
.110 (2.79) .090 (2.29)
.022 (0.56) .015 (0.38)
8-Pin CerDIP
.110 (2.79) .090 (2.29)
PIN 1
.300 (7.62) .230 (5.84)
.055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18)
.020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065(1.65) .020 (0.51) .045 (1.14) .016 (0.41) Dimensions: inches (mm) 6
.150 (3.81) MIN.
3MIN.
6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
PACKAGE DIMENSIONS (Cont.) 8-Pin SOIC
PIN 1
.157 (3.99) .150 (3.81)
.244 (6.20) .228 (5.79)
.050 (1.27) TYP.
.197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .018 (0.46) .010 (0.25) .014 (0.36) .004 (0.10) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40)
8MAX.
5-Pin TO-220
.113 (2.87) .103 (2.62) .410 (10.41) .390 (9.91) .156 (3.96) .146 (3.71) DIA. .055 (1.40) .045 (1.14)
.185 (4.70) .165 (4.19)
.258 (6.55) .230 (5.84) .594 (15.09) .569 (14.45) 3 - 7.5 5 PLCS.
.560 (14.22) .518 (13.16)
.037 (0.94) .027 (0.69) .020 (0.51) .012 (0.30) .072 (1.83) .062 (1.57) .273 (6.93) .263 (6.68) .115 (2.92) .095 (2.41)
Dimensions: inches (mm)
Sales Offices
TelCom Semiconductor 1300 Terra Bella Avenue P.O. Box 7267 Mountain View, CA 94039-7267 TEL: 415-968-9241 FAX: 415-967-1590 E-Mail: liter@c2smtp.telcom-semi.com TelCom Semiconductor Austin Product Center 9101 Burnet Rd. Suite 214 Austin, TX 78758 TEL: 512-873-7100 FAX: 512-873-8236 TelCom Semiconductor H.K. Ltd. 10 Sam Chuk Street, Ground Floor San Po Kong, Kowloon Hong Kong TEL: 852-2324-0122 FAX: 852-2354-9957
Printed in the U.S.A
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